Ralph, although I completely agree with you regarding the overriding importance of designing sufficient overload margin and circuit stability into phono stages, while rectification of RF energy (and subsequent intermodulation) is indeed an issue with bipolar transistors due to the base-emitter connection functioning as a diode, JFETs are free of this effect.
A phono stage with JFET front-end devices can therefore be run with input resistors in the megohm range without problem.
The RF rectification issue of bipolar transistors can be reduced if local feedback (emitter resistors) are added, but doing so will worsen the noise, which is the main reason for using a bipolar transistor front end in the first place.
A further problem with a bipolar transistor front-end is the base current, which will go through the cartridge coils (gradually magnetizing the coil former, which is definitely undesirable). And if the input resistor is of high value, the base currents will cause DC offsets, unless the input is capacitor-coupled (a band-aid that wouldn't be necessary with a JFET front-end).
The main difficulties with JFETs are their comparatively low maximum voltage rating, and significant device-to-device variation.
Unlike the situation with bipolar transistor front-ends, both JFET issues are solvable cleanly; the voltage rating with cascoding, and the device variation by measuring and sorting prior to assembly (although this does mean extra work).
kind regards, jonathan
PS. Nor do I accept that there is a need to insert the extra Neumann constant, as listening tests (LP vs. master tape) have not necessarily shown it to be an improvement. And with half-speed LPs, the target frequency will be an octave wrong.
A phono stage with JFET front-end devices can therefore be run with input resistors in the megohm range without problem.
The RF rectification issue of bipolar transistors can be reduced if local feedback (emitter resistors) are added, but doing so will worsen the noise, which is the main reason for using a bipolar transistor front end in the first place.
A further problem with a bipolar transistor front-end is the base current, which will go through the cartridge coils (gradually magnetizing the coil former, which is definitely undesirable). And if the input resistor is of high value, the base currents will cause DC offsets, unless the input is capacitor-coupled (a band-aid that wouldn't be necessary with a JFET front-end).
The main difficulties with JFETs are their comparatively low maximum voltage rating, and significant device-to-device variation.
Unlike the situation with bipolar transistor front-ends, both JFET issues are solvable cleanly; the voltage rating with cascoding, and the device variation by measuring and sorting prior to assembly (although this does mean extra work).
kind regards, jonathan
PS. Nor do I accept that there is a need to insert the extra Neumann constant, as listening tests (LP vs. master tape) have not necessarily shown it to be an improvement. And with half-speed LPs, the target frequency will be an octave wrong.