CLASS D MONO AMPS buy ATMASPHERE MUSIC SYSTEMS


CLASS D AMPLIFIER TECHNOLOGY HAS FINALLY ARRIVED TO OUTPERFORM ALL OTHER TOPOLOGIES 

The Amplifier is the New Class D Mono Amps using GaN Fets in a unique Patented
Circlotronic output stage…Design by Ralph Karsten of ATMASPHERE MUSIC SYSTEMS 

Rated at 100 watts 8 ohms and 200 watts 4 ohms with low distortion across the full audio bandwidth with excellent noise characteristics 

I have been using ATMASPHERE MUSIC SYSTEMS MA-1 3.0 with all factory upgrades along with NOS 6NS7 Input Tubes for many years 

The New ATMASPHERE MUSIC SYSTEMS CLASS D has outperformed my MA-1 3.0 in all areas…the resolution and transparency are simply an Amazing Accomplishment

Also I sold my MP-3 mk 3.0 and purchased the New MP-3 mk3.3

In my Audio opinion I believe the ATMASPHERE MUSIC SYSTEMS CLASS D MONO AMPS used with the MP-3 mk3.3 will offer one of the most transparent sounding electronics combinations to date…only using the MP-1 mk3.3 will offer more performance 

I have used other High End Amplifiers in my system and the ATMASPHERE MUSIC SYSTEMS CLASS D MONO AMPS outperformed all of them as well

Music Lover…Audiophile…Retired Audio/Video Engineer over 45 years 

Thanks for Reading 

TubeGuy 45

tubeguy45

From AS.

Not surprisingly, with this much power on tap in a standard-sized chassis, DragoN is a hybrid tube/Class D design. However, the rogues at Rogue emphasize that it’s not “simply a tube circuit placed in front of a Class D output section.” They describe their proprietary “tubeD” circuit topology as one that integrates the tube section (a pair of 12AU7 tubes) into the amplifier’s output stage. Additionally, three massive linear power supplies built around large, high-performance toroidal transformers power the amplifier circuitry, and top-shelf parts mounted on a heavy (two-ounce) copper circuit board are used exclusively throughout.

At only 500Khz, what is the advantage of using GaN?

@kuribo 

In a nutshell, reduced distortion and less heat than MOSFETs, not like that's much of a thing. The faster speed of GaNFETs requires less deadtime, which has to be increased at higher switching frequencies (when we first started doing this, I thought the deadtime would be constant regardless of the switching frequency and learned otherwise; either way deadtime becomes a greater distortion influence as you increase the switching frequency).

 

Would the dead time be more like, or analogous to, crossover distortion, slew rate distortion, or neither?