George, looks like you made my point.
As Steve Colino of GaN (EPC) has said below, there is no need for any heatsink on the GaN transistors if they are used at todays switching speed. Only if you use the option to raise that switching speed to gain the extra sound quality, then there is the need for a heat sink to be mounted to the GaN transistors, as in the Merrill and Technics case.
Once again you twist things, "it’s not a good look" if you try to put s**t on this new technology while your trying to release your own Class-D amps.
Excerpts from Steve Colino’s email to me.
V.P., Strategic Technical Sales
EPC (Efficient Power Conversion Corporation)
"EPC9106 GaN FET we were able to get outstanding sound quality in the amplifier without heatsinking.
Our GaN FETs will give an even higher performance difference compared to MOSFETs in both sound quality and efficiency at 1.536 MHz switching speed.
The eGaNAMO2016 is a GaN FET amplifier platform that is capable of delivering a very high performance 200 W into an 8 Ω speaker load (400 W into 4 Ω) [8]. Its 96% system efficiency without requiring a heatsink.
You can take the value in sound quality and eliminating heatsink assembly costs while delivering your customers increased efficiency is a smaller form factor."
https://www.digikey.com/product-detail/en/epc/EPC9106/917-1090-ND/5036827
" THERMAL CONSIDERATIONS With this high efficiency, the EPC9106 design allows for the complete removal of any classical or historical heat sink requirement. This elimination of the heat sink also reduces the potential contribution to radiated EMI/EMC emissions.